Pabna University of Science and Technology

Faculty Profile

Dr. Sheikh Rashel Al Ahmed

M.Sc. (Raj), Doctor of Engineering (Japan)

Associate Professor

Department of Electrical, Electronic and Communication Engineering

Pabna University of Science and Technology

Pabna, Bangladesh

Contact Information

+88073164903 (Office)

rashel@pust.ac.bd (Office)

rashel_ete@yahoo.com (Personal)

Total Publications: 25

Total Publications (25)

20
5

Biography (1)

  • Dr. Sheikh Rashel Al Ahmed is an Associate Professor of the Department of Electrical, Electronic and Communication Engineering, Pabna University of Science and Technology, Pabna, Bangladesh. He received his Doctor of Engineering degree from Tokai University, Kanagawa, Japan under Japanese Government (Monbukagakusho/MEXT) Scholarship in 2017. Previously, he completed his B.Sc. and M.Sc. degrees in Applied Physics and Electronic Engineering from Rajshahi University, Bangladesh in 2007 and 2008, respectively. His research interests focus on Solid-State Physics, Thin-Film Technology, Semiconductor Devices, Solar Energy, Dielectrics, and Nanotechnology.

Education (3)

  • Bachelor of Science, (Four-Years), Dept. of Applied Physics and Electronic Engineering, Rajshahi University, Rajshahi, Bangladesh
  • Master of Science (Thesis Group), Dept. of Applied Physics and Electronic Engineering, Rajshahi University, Rajshahi, Bangladesh
  • Doctor of Engineering (D. Engg.), Dept. of Electrical and Electronic Engineering, Graduate School of Science and Technology, Tokai University, Japan, Successfully Awarded in 2017

Teaching Experience (3)

  • Lecturer, Dept. of Electronic and Telecommunication Engineering, Pabna University of Science and Technology, Pabna, Bangladesh (Period: 01/01/2011 to 27/09/2013)
  • Assistant Professor, Dept. of Electronic and Telecommunication Engineering, Pabna University of Science and Technology, Pabna, Bangladesh (Period: 28/09/2013 to 17/08/2018)
  • Associate Professor, Dept. of Electrical, Electronic and Communication Engineering, Pabna University of Science and Technology, Pabna, Bangladesh (Period: 18/08/2018 to present)

Administrative or Other Experience (6)

  • Reviewer: Solar Energy, Elsevier; Semiconductor Science and Technology, IOP Publishing; International Journal of Energy Research, John Wiley & Sons Ltd; Journal of Photochemistry & Photobiology, A: Chemistry, Elsevier B.V; Zeitschrift für Naturforschung A (A Journal of Physical Sciences), De Gruyter;
  • Program Committee Member, 2nd International Conference on Cloud, Big Data and IoT (CBIoT 2021), June 26~27, 2021, Sydney, Australia, https://itcse2021.org/cbiot/committee.html
  • Chairman, Dept. Electrical, Electronic and Communication Engineering, Faculty of Engineering and Technology, Pabna University of Science and Technology, Pabna (Period: 04/03/2018 to 03/03/2021)
  • Dean, Faculty of Engineering and Technology, Pabna University of Science and Technology, Pabna (Period: 11/09/2018 to 10/09/2020)
  • Doctoral Researcher (Japanese Government MEXT Scholar), Dept. of Electrical and Electronic Engineering, Graduate School of Science and Technology, Tokai University, Japan (Periode: 22/09/2014 to 21/09/2017)
  • Assistant Proctor, Proctor Office, Pabna University of Science and Technology, Pabna (Period: 16/01/2012 to 31/08/2014)

Research Interests (6)

  • Solid-State Devices
  • Thin-Film Technology
  • Semiconductor Devices
  • Solar Energy
  • Dielectric Materials
  • Nanotechnology.

Active Research Project (3)

  • 1. Fabrication of silicon nitride films at low temperature using solution process
  • 2. Development of high efficiency thin-film heterojunction solar cells
  • 3. Study of performance enhancement of charge trapping nonvolatile memories

Awards & Recognition (1)

  • Japanese Government (Monbukagakusho) Scholarship awarded by The Ministry of Education, Culture, Sports, Science and Technology (MEXT) for pursuing doctoral degree in Japan. (Period: October, 2014 to September, 2017)

Journal Articles (20)

  • 2021: Adil Sunny, Sabrina Rahman, Most. Marzia Khatun, and Sheikh Rashel Al Ahmed, Numerical study of high performance HTL-free CH3NH3SnI3-based perovskite solar cell by SCAPS-1D, AIP Advances 11, 065102 (2021); https://doi.org/10.1063/5.0049646
  • 2021: A. Sunny, S.R.A. Ahmed, "Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer", Phys. Status Solidi B 2021, 2000630, https://doi.org/10.1002/pssb.202000630.
  • 2021: A. Hosen, M.S. Mian, & S.R.A. Ahmed, Simulating the performance of a highly efficient CuBi2O4-based thin-film solar cell, SN Appl. Sci. 3, 544 (2021). https://doi.org/10.1007/s42452-021-04554-z
  • 2021: Sheikh Rashel Al Ahmed, Adil Sunny, Sabrina Rahman, Performance enhancement of Sb2Se3 solar cell using a back surface field layer: A numerical simulation approach, Solar Energy Materials and Solar Cells Volume 221, March 2021, 110919, https://doi.org/10.1016/j.solmat.2020.110919.
  • 2020: S. R. A. Ahmed, J. Ferdous, and M. S. Mian, “Development of a novel CdTe/ZnS/ZnTe heterojunction thin-film solar cells: a numerical approach,” IOP SciNotes 1 (2020) 024802, https://doi.org/10.1088/2633-1357/aba1f7.
  • 2020: J. Hossain, B. K. Mondal, S. K. Mostaque, S. R. A. Ahmed, and H. Shirai, “Optimization of multilayer anti-reflection coatings for efficient light management of PEDOT:PSS/c-Si heterojunction solar cells,” Mater. Res. Express 7 (2020) 015502, https://doi.org/10.1088/2053-1591/ab5ac7.
  • 2019: M. S. Sarker, M. F. Khatun, S. R. Al Ahmed and J. Hossain, “Optimization of multilayer antireflection coatings for improving performance of silicon solar cells,” 2019 International Conference on Computer, Communication, Chemical, Materials and Electronic Engineering (IC4ME2), Rajshahi, Bangladesh, 2019, pp. 1-4, doi: 10.1109/IC4ME247184.2019.9036677. (Electronic ISBN: 978-1-7281-3060-6, Print on Demand(PoD) ISBN: 978-1-7281-3061-3)
  • 2017: Sheikh Rashel Al Ahmed, Kaihei Kato, and Kiyoteru Kobayashi, “Hole trapping characteristics of silicon carbonitride (SiCN)-based charge trapping memories evaluated by the constant-current carrier injection method,” Materials Science in Semiconductor Processing, ISSN: 1369-8001, Nov. 2017, Vol. 70, pp. 265-271. DOI: http://dx.doi.org/10.1016/j.mssp.2017.01.012
  • 2017: Sheikh Rashel Al AHMED and Kiyoteru KOBAYASHI, “Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films,” IEICE TRANS. ELECTRON., ISSN: 0916-8524 (Print), ISSN: 1745-1353 (Online), July 2017, Vol. E100-C, No. 7, pp. 662-668. DOI: http://doi.org/10.1587/transele.E100.C.662
  • 2017: K. Kato, S. R. A. Ahmed, and K. Kobayashi, “Evaluation of Hole Trapping Characteristics in MONOS-Type Memories Using the Constant Current Carrier Injection Method,” ECS Transactions, ISSN: 1938-6737 (Print), ISSN: 1938-5862 (Online), Jan. 2017, Vol. 75, No. 32, pp. 73-82. DOI: http://doi.org/10.1149/07532.0073ecst
  • 2017: S. R. A. Ahmed, K. Kato, and K. Kobayashi, “Experimental Extraction of the Charge Centroid in SiCN-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method,” ECS Transactions, ISSN: 1938-6737 (Print), ISSN: 1938-5862 (Online), Jan. 2017, Vol. 75, No. 32, pp. 51-62. DOI: http://doi.org/10.1149/07532.0051ecst
  • 2016: Md. Ferdous Rahman, Sheikh Rashel Al Ahmed, Golam Saklayen, and Abu Bakar Md. Ismail, “Experimental Study on Silicon Nanocrystals Rich Lanthanum Fluoride Films for Future Electronic Devices,” Rajshahi University Journal of Science & Engineering, ISSN: 2309-0952 (Print), ISSN: 2408-8803 (Online), Nov. 2016, Vol. 44, pp. 61-66. DOI: http://dx.doi.org/10.3329/rujse.v44i0.30388
  • 2015: S. R. A. Ahmed, S. Naito, and K. Kobayashi, “Characterization of Low-Dielectric Constant Silicon Carbonitride (SiCN) Dielectric Films for Charge Trapping Nonvolatile Memories,” ECS Transactions, ISSN: 1938-6737 (Print), ISSN: 1938-5862 (Online), Oct. 2015, Vol. 69, No.3, pp. 99-109. DOI: http://doi.org/10.1149/06903.0099ecst
  • 2014: Sheikh Rashel Al Ahmed, Md. Ferdous Rahman, and Abu Bakar Md. Ismail, “Novel Silicon Nanocrystal-Embedded LaF3 Insulating Material for Metal-Insulator-Semiconductor-Type Non-Volatile Memory,” Advanced Science, Engineering and Medicine, ISSN: 2164-6627 (Print), ISSN: 2164-6635 (Online), June 2014, Vol. 6, No. 6, pp. 694-697. DOI: https://doi.org/10.1166/asem.2014.1555
  • 2014: S. M. Yahea Mahbub, Md. Rashedul Islam, and Sheikh Rashel Al Ahmed, “Evaluation of Different Tariff Rate offered by Mobile Telephone Operators Using Personal Social Network Model,” International Journal of Scientific & Engineering Research, Volume 5, Issue 5, May-2014, pp. 1339.
  • 2014: Sheikh Rashel Al Ahmed and Abu Bakar Md. Ismail, “Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application,” American Journal of Nanoscience and Nanotechnology (Present name is American Journal of Nano Research and Applications), ISSN: 2575-3754 (Print), ISSN: 2575-3738 (Online), Jan. 2014, Vol. 2, No. 1, pp. 8-12. DOI: http://doi.org/10.11648/j.nano.20140201.12
  • 2013: S. R. AL AHMED, M E. ISLAM, AND A. B. M. ISMAIL, “ELECTRICAL PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICES WITH SILICON NANOCRYSTALS (SI-NCS) EMBEDDED IN LANTHANUM FLUORIDE (LAF3) INSULATING LAYER,” Bangladesh Journal of Physics, ISSN: 1816-1081, Dec. 2013, Vol. 14, pp. 11-16. URL: http://bdphs.org/en/publications/journals/category/5-vol-14.html#
  • 2013: Md. Rashedul Islam, Md. Kislu Noman, Sheikh Rashel Al Ahmed, and Nur Hossain Khan, “An Overview of PAPR Reduction Technique for OFDM Signals by using Selective Mapping Technique (SLM)”, IJCSET, December 2013, Vol 3, Issue 12, pp. 439-442.
  • 2013: Sheikh Rashel Al Ahmed and Abu Bakar Md. Ismail, “Electronics Properties of Si Nanocrystals Mixed-LaF3 layer produced by a novel chemical bath deposition technique,” International Journal of Engineering Research & Technology, ISSN: 2278-0181, Sept. 2013, Vol. 2, No. 9, pp. 3170-3174. URL:http://www.ijert.org/view-pdf/5472/electronics-properties-of-si-nanocrystals-mixed-laf3-layer-produced-by-a-novel-chemical-bath-deposition-technique
  • 2011: Shaikh Rashel Al Ahmed, Sinthia Shabnam Mou, and Abu Bakar Md. Ismail, “Investigation on Lanthanum Fluoride insulating layer embedding silicon nanocrystals for metal-insulator-semiconductor (MIS) devices,” IEEE Proceedings of Argentine School of Micro-Nanoelectronics Technology and Applications (EAMTA), ISBN: 978-1-4577-1236-4 (Print), ISBN: 978-1-4577-1236-4 (Print on Demand), ISBN: 978-987-1620-47-0 (Electronic), Sept. 2011, pp. 1-5 (Peer-reviewed). URL: http://ieeexplore.ieee.org/document/6021273/

Conference Proceedings (5)

  • 1. S. R. A. Ahmed, K. Kato, and K. Kobayashi, “Experimental Extraction of the Charge Centroid in SiCN-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method,” Extended Abstract of Pacific Rim Meeting on Electrochemical and Solid-State Science 2016 (The PRiME 2016 Meeting), Honolulu, HI,USA, 2016, MA2016-02(16):1455.
  • 2. K. Kato, S. R. A. Ahmed, and K. Kobayashi,“Evaluation of Hole Trapping Characteristics in MONOS-Type Memories Using the Constant Current Carrier Injection Method,”Extended Abstract of Pacific Rim Meeting on Electrochemical and Solid-State Science 2016 (The PRiME 2016 Meeting), Honolulu, HI,USA, 2016, MA2016-02(16):1464.
  • 3. S. R. A. Ahmed, S. Tanaka, and K. Kobayashi, “Hole trapping characteristics of SiCN-based charge trapping memories using a constant-current carrier injection method,” Proceedings of 7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII), Nagoya University, Nagoya, Japan, 2016, pp. 189-190.
  • 4. S. R. A. Ahmed, S. Tanaka, and K. Kobayashi, “Hole Trapping Characteristics of Nitride-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method,” Extended Abstract of International Workshop on Dielectric Thin Films for Future Electron Devices-Science and Technology-(2015 IWDTF), Tokyo, Japan, 2015, pp. 27-28.
  • 5. S. R. A. Ahmed, S. Naito, and K. Kobayashi, “Characterization of Low-Dielectric Constant Silicon Carbonitride (SiCN) Dielectric Films for Charge Trapping Nonvolatile Memories,” Extended Abstract of The 228th ECS Meeting, The Electrochemical Society, Arizona, USA, 2015, MA2015-02(16):773.

Conference and Seminar Attended (18)

  • Joined in the Global Renewable Energy Researchers Meet VIRTUAL May 7-8, 2021
  • Attended in the Future Energy Materials Conference 2021, March 22-23, 2021 (Virtual)
  • Session Chair, The 2nd International Conference on Robotics, Electrical and Signal Processing Techniques 2021 (ICREST 2021), https://icrest.aiub.edu/wp-content/uploads/2021/01/Detailed_PROGRAMME-SCHEDULE-ICREST-2021_Final.pdf
  • 1. M. S. Sarker, M. F. Khatun, S. R. Al Ahmed and J. Hossain, “Optimization of multilayer antireflection coatings for improving performance of silicon solar cells,” 2019 International Conference on Computer, Communication, Chemical, Materials and Electronic Engineering (IC4ME2), Rajshahi, Bangladesh, 2019, pp. 1-4.
  • 2. H. Mino, S. R. A. Ahmed, K. Kato, and K. Kobayashi, “Hole trapping characteristics of silicon carbonitride films for charge trapping memory applications,” The 78th JSAP Autumn Meeting 2017, The Japan Society of Applied Physics, Fukuoka, Japan, Sept. 5-8, 2017, 6a-PA9-8.
  • 3. K. Kato, S. R. A. Ahmed, and K. Kobayashi,“Evaluation of Hole Trapping Characteristics in MONOS-Type Memories Using the Constant Current Carrier Injection Method,”Pacific Rim Meeting on Electrochemical and Solid-State Science 2016 (The PRiME 2016 Meeting), Honolulu, HI,USA, Oct. 2-7, 2016, D02-1464.
  • 4. S. R. A. Ahmed, K. Kato, and K. Kobayashi, “Experimental Extraction of the Charge Centroid in SiCN-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method,” Pacific Rim Meeting on Electrochemical and Solid-State Science 2016 (The PRiME 2016 Meeting), Honolulu, HI,USA, Oct. 2-7, 2016, D02-1455.
  • 5. S. R. A. Ahmed, S. Tanaka, and K. Kobayashi, “Hole trapping characteristics of SiCN-based charge trapping memories using a constant-current carrier injection method,” 7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII), Nagoya University, Nagoya, Japan, June 7-11, 2016, FE-PB-10.
  • 6. Sheikh Rashel Al Ahmed, Shin Tanaka, and Kiyoteru Kobayashi, “Evaluation of hole trapping efficiency in SiCN-based charge trapping memories using the constant-current carrier injection method,” The 83rd Spring Meeting 2016, The Electrochemical Society of Japan, Osaka University, Osaka, Japan, March 29-31, 2016, 1Q24.
  • 7. S. R. A. Ahmed, F. Uehara, and K. Kobayashi, “Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics (II),” The 63rd JSAP Spring Meeting 2016, The Japan Society of Applied Physics, Tokyo Institute of Technology, Tokyo, Japan, March 19-22, 2016, E 20a-S221-5.
  • 8. S. R. A. Ahmed, S. Tanaka, and K. Kobayashi, “Hole Trapping Characteristics of Nitride-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method,” International Workshop on Dielectric Thin Films for Future Electron Devices-Science and Technology-(2015 IWDTF), Tokyo, Japan, Nov. 2-4, 2015, P8.
  • 9. S. R. A. Ahmed, S. Naito, and K. Kobayashi, “Characterization of Low-Dielectric Constant Silicon Carbonitride (SiCN) Dielectric Films for Charge Trapping Nonvolatile Memories,” The 228th ECS Meeting, The Electrochemical Society, Arizona, USA, Oct. 11-15, 2015, D02-773.
  • 10. S. R. A. Ahmed, S. Naito, H. Shibayama, J. Nakamura, and K. Kobayashi, “Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics,” The 62nd JSAP Spring Meeting 2015, The Japan Society of Applied Physics, Tokai University (Shonan Campus), Kanagawa, Japan, March 11-14, 2015, 12a-P12-3.
  • 11. Shaikh Rashel Al Ahmed, Md. Hafizur Rahman, Sinthia Shabnam Mou, Md. Johurul Islam, and Abu Bakar Md. Ismail, “Investigation on Silicon Nanocrystals(Si-NCs)-Embedded Lanthanum Fluoride (LaF3) Insulating Layer for Metal-Insulator-Semiconductor(MIS) Devices,” National Conference on Physics for Development, Bangladesh Physical Society, BUET, Bangladesh, Feb. 10-11, 2011, P23.
  • 12. Md. Hafizur Rahman, Shaikh Rashel Al Ahmed, Sinthia Shabnam Mou, and Abu Bakar Md. Ismail, “Investigation on the Influence of LaCl3 Concentration on the Structural, Compositional and Electrical Properties of Chemical-Bath Deposited LaF3 on Porous Silicon (PS),” National Conference on Physics for Development, Bangladesh Physical Society, BUET, Bangladesh, Feb. 10-11, 2011, SSIT-II-A 08.
  • Others:
  • (i) Attended in The 81th Symposium on Semiconductors and Integrated Circuits Technology, Tokyo University of Science, Tokyo, Aug. 24-25, 2017.
  • (ii) Attended in The 79th Symposium on Semiconductors and Integrated Circuits Technology,Waseda University, Tokyo, Japan, July 9-10, 2015.

Other's Faculty Members